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 Bulletin PD -2.364 rev. B 11/00
HFA16PB120
HEXFRED
Features
* * * * * Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions
TM
Ultrafast, Soft Recovery Diode
BASE CATHODE
VR = 1200V VF(typ.)* = 2.3V IF(AV) = 16A Qrr (typ.)= 260nC IRRM(typ.) = 5.8A
3 ANODE 2
4
2
Benefits
* Reduced RFI and EMI * Reduced Power Loss in Diode and Switching Transistor * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count
1 CATHODE
trr(typ.) = 30ns di(rec)M/dt (typ.)* = 76A/s
Description
International Rectifier's HFA16PB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.
TO-247AC (Modified)
Absolute Maximum Ratings
Parameter
VR IF @ TC = 25C IF @ TC = 100C IFSM IFRM PD @ TC = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Repetitive Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Max
1200 16 190 64 151 60 -55 to +150
Units
V A
W C
* 125C
HFA16PB120
Bulletin PD-2.364 rev. A 11/00
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V BR VFM IRM CT LS Cathode Anode Breakdown Voltage Max Forward Voltage Max Reverse Leakage Current Junction Capacitance Series Inductance
Min Typ Max Units
1200 2.5 3.0 3.2 3.93 2.3 2.7 0.75 20 375 2000 27 40 8.0 V V A pF nH
Test Conditions
IR = 100A IF = 16A See Fig. 1 IF = 32A IF = 16A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 0.8 x VR RatedD Rated See Fig. 3 VR = 200V Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time See Fig. 5, 10 Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8
Min Typ Max Units
Test Conditions
30 IF = 1.0A, dif/dt = 200A/s, VR = 30V 90 135 ns TJ = 25C 164 245 TJ = 125C IF = 16A 5.8 10 TJ = 25C A 8.3 15 TJ = 125C VR = 200V 260 675 TJ = 25C nC 680 1838 TJ = 125C dif/dt = 200A/s 120 TJ = 25C A/s 76 TJ = 125C
Thermal - Mechanical Characteristics
Parameter
Tlead! RthJC RthJA" RthCS# Wt Lead Temperature Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Case to Heat Sink Weight Mounting Torque 6.0 5.0
Min
Typ
Max
300 0.83 80
Units
C K/W g (oz) Kg-cm lbf*in
0.50 2.0 0.07 12 10
! 0.063 in. from Case (1.6mm) for 10 sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased
2
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HFA16PB120
Bulletin PD-2.364 rev. A 11/00
100
1000
Reverse Current - IR (A)
TJ = 150C
100
10
T = 125C J
Instantaneous Forward Current - IF (A)
1
TJ = 25C
0.1 A 0 200 400 600 800 1000 1200
10
0.01
T = 150C J T = 125C J T = 25C J
Reverse Current - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
1000
Junction Capacitance -CT (pF)
1
100
T J = 25C
10
0.1 0 2 4 6 8
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1 1 10 100 1000
A 10000
Reverse Current - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
thJC
)
Thermal Response (Z
0.1
D D D D D D
= = = = = =
0.50 0.20 0.10 0.05 0.02 0.01
PDM
Single Pulse (Thermal Resistance) Notes:
t1 t2 1. Duty factor D = t1/ t 2 2. Peak TJ = Pdm x ZthJC + Tc
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA16PB120
Bulletin PD-2.364 rev. A 11/00
270
30
220
If = 16 A If = 8 A
trr (nC) Irr ( A)
25
V R = 200V T J = 125C T J = 25C
20
170
If = 16 A If = 8 A
15
120
10
70
VR = 200V TJ = 125C TJ = 25C
5
20 100
di f / dt (A/s)
1000
0 100
di f / dt (A/s)
1000
Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg)
1600 1400 1200 1000
Qrr (nC)
V R = 200V T J = 125C T J = 25C
Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg)
10000
V R = 200V T J = 125C T J = 25C
If = 16A If = 8A
di (rec) M/dt (A /s)
1000
If = 16A If = 8A
800 600 400 200 0 100
100
Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg)
di f / dt (A/s)
1000
10 100
Fig. 8 - Typical di(rec)M/dt vs. dif/dt, (per Leg)
di f / dt (A/s)
1000
4
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HFA16PB120
Bulletin PD-2.364 rev. A 11/00
3
IF
trr ta tb
4
REVERSE RECOVERY CIRCUIT
VR = 200V
0
Q rr
2
I RRM
0.5 I RRM di(rec)M/dt
5
0.01 L = 70H D.U.T. dif/dt ADJUST D G IRFP250 S
1
0.75 I RRM di f /dt
4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr
1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
HFA16PB120
Bulletin PD-2.364 rev. A 11/00
Conforms to JEDEC Outline TO-247AC(Modified) Dimensions in millimeters and inches
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Fax-On-Demand: +44 1883 733420
6
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